期刊
NANO LETTERS
卷 9, 期 10, 页码 3629-3634出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl9018512
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资金
- Office of Naval Research [N00014-09-01-0250]
- National Institutes of Health [PN2EY016586]
- National Science Foundation [NSF EF-05-07086, CHE-0641523]
- New York State Office of Science, Technology, and Academic Research (NYSTAR)
We explore the limits of a simple and facile process for transferring low aspect ratio, high-resolution features defined by nanoimprint lithography. The process involves postimprint deposition of an angle-evaporated hard mask. This widens the process window for residual resist removal and facilitates easy liftoff. An added benefit is a concomitant reduction of feature size. A postliftoff annealing step produces high pattern uniformity and additional feature size reduction. The process Is extremely robust, and It enables relatively straightforward fabrication of sub-5-nm spherical structures. It Is extendible to rectilinear patterns as well.
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