期刊
NANO LETTERS
卷 9, 期 8, 页码 2867-2872出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl9010518
关键词
-
类别
资金
- Ministry of Education, Science and Technology
- National Core Research Center for Nanomedical Technology [R15-2004-024-00000-0]
- Seoul Research and Business Development Program [10816]
- Korea Science and Engineering Foundation (KOSEF) [R11-2005-065, R01-2007-000-10032-0]
- National Science Foundation [DMI-0507053]
- Seoul Science Fellowship
- National Research Foundation of Korea [R01-2007-000-10032-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Bismuth telluride (Bi2Te3) nanowires are of great interest as nanoscale building blocks for high-efficiency thermoelectric devices. Their low-dimensional character leads to an enhanced figure-of-merit (ZT), an indicator of thermoelectric efficiency. Herein, we report the invention of a direct growth method termed On-Film Formation of Nanowires (OFF-ON) for making high-quality single-crystal compound semiconductor nanowires, that is, Bi2Te3, without the use of conventional templates, catalysts, or starting materials. We have used the OFF-ON technique to grow single crystal compound semiconductor Bi2Te3 nanowires from sputtered BiTe films after thermal annealing at 350 degrees C. The mechanism for wire growth is stress-induced mass flow along grain boundaries in the polycrystalline film. OFF-ON is a simple but powerful method for growing perfect single-crystal compound semiconductor nanowires of high aspect ratio with high crystallinity that distinguishes it from other competitive growth approaches that have been developed to date.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据