4.8 Article

Synthesis, Electronic Structure, and Raman Scattering of Phosphorus-Doped Single-Wall Carbon Nanotubes

期刊

NANO LETTERS
卷 9, 期 6, 页码 2267-2272

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl9004207

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资金

  1. FAPEMIG
  2. Rede Nacional de Pesquisa em Nanotubos de Carbono
  3. Rede National de SPM
  4. Instituto de Nanotecnologia (MCT-CNPq)
  5. CAPES/DAAD-Probral
  6. CONACYT-Mexico [56787]
  7. Laboratory for Nanoscience and Nanotechnology ResearchLINAN [45762, 45772]
  8. Fondo Mixto de San Luis Potosi [63001 S-3908, 2004-01-013/SALUDCONACYT, 63072 S-3909]
  9. Division of Materials Science and Engineering, U.S. Department of Energy
  10. Center for Nanophase Materials Sciences (CNMS)
  11. Division of Scientific User Facilities

向作者/读者索取更多资源

Substitutional phosphorus doping in single-wall carbon nanotubes (SWNTs) is investigated by density functional theory and resonance Raman spectroscopy. Electronic structure calculations predict charge localization on the phosphorus atom, generating nondispersive valence and conduction bands close to the Fermi level. Besides confirming sustitutional doping, accurate analysis of electron and phonon renormalization effects in the double-resonance Raman process elucidates the different nature of the phosphorus donor doping (localized) when compared to nitrogen substitutional doping (nonlocalized) in SWNTs.

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