期刊
NANO LETTERS
卷 9, 期 6, 页码 2350-2353出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl900816p
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- Office of Naval Research [N00014-08WX-20705]
Spintronics is a new paradigm for integrated digital electronics. Recently established as a niche for nonvolatile magnetic random access memory (MRAM), it offers new functionality while demonstrating low-power and high-speed performance. However, to reach high density spintronic technology must make a transition to the nanometer scale. Prototype devices are presently made using a planar geometry and have an area determined by the lithographic feature size, currently about 100 nm. Here we present a new nonplanar geometry in which one lateral dimension is given by a film thickness, on the order of 10 nm. With this new approach, cell sizes can shrink by an order of magnitude. The geometry is demonstrated with a nonlocal spin valve, where we study devices with an injector/detector separation much less than the spin diffusion length.
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