期刊
NANO LETTERS
卷 9, 期 1, 页码 383-387出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl803188g
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资金
- MOE AcRF Tier 2 Funding [ARC 17/07, T207B1203]
In situ Raman scattering is performed on an individual semiconducting double-walled carbon nanotube (DWNT) in a field-effect transistor (FET) geometry, while the transfer characteristics of the DWNT-FET are measured. Through studying the Raman spectra with response to forward and backward gate voltage (V-gs) sweeping, respectively, we observe hysteresis loops in the curves of G(-) peak frequency and the intensity ratio of G(-) to G(+) (IG-/IG+) as a function of V-gs. These loops correlate very well with the hysteretic transfer characteristics of the device. The clear correlations suggest that G(-) peak line width and IG-/IG+. increase with the carrier concentration in the DWNT induced by V-gs. In addition, unique G(-) peak line width variations with V-gs can be attributed to interband electron transitions between the energy bands of two concentric shells of the DWNT excited by G phonons.
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