4.8 Article

Microwave Induced In-Situ Active Ion Etching of Growing InP Nanocrystals

期刊

NANO LETTERS
卷 8, 期 10, 页码 3394-3397

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl802075j

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资金

  1. National Institute of Health [R01-00832]
  2. National Science Foundation [NSF-DMR-0701462]
  3. NSF-DMR [9625692]
  4. Division Of Materials Research
  5. Direct For Mathematical & Physical Scien [9625692] Funding Source: National Science Foundation

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High quantum yield (47%) InP nanocrystals can be prepared without the need for post HF treatment by combining microwave methodologies with the presence of a fluorinated ionic liquid. Growing the InP nanocrystals in the presence of the ionic liquid 1-hexyl-3-methyl-imidazolium tetrafluoroborate (hmim BF4) allows in situ etching to be achieved. The optimization of the PL QY is achieved by balancing growth and etching rates in the reaction.

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