期刊
NANO LETTERS
卷 8, 期 9, 页码 2682-2687出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl800967n
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资金
- AFOSR [FA9550-06-1-0384]
- NSF [NIRT-0609077]
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1047655] Funding Source: National Science Foundation
We have combined fast heating with plasma enhanced chemical vapor deposition (PECVD) for preferential growth of semiconducting vertically aligned single-walled carbon nanotubes (VA-SWNTs). Raman spectroscopic estimation indicated a high yield of up to 96% semiconducting SWNTs in the VA-SWNT array. The as-synthesized semiconducting SWNTs can be used directly for fabricating FET devices without the need for any postsynthesis purification or separation.
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