期刊
NANO LETTERS
卷 8, 期 9, 页码 2767-2772出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl801288d
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资金
- Initiative and Networking Fund of the Helmholtz-Gemeinschaft Deutscher Forschungszentren [VH-NG-126]
- Agilent Technologies
- Deutsche Forschungsgemeinschaft (DFG)
We report on reversible metal to insulator transitions in metallic single-walled carbon nanotube devices induced by repeated electron irradiation of a nanotube segment. The transition from a low-resistive, metallic state to a high-resistive, insulating state by 3 orders of magnitude was monitored by electron transport measurements. Application of a large voltage bias leads to a transition back to the original metallic state. Both states are stable in time, and transitions are fully reversible and reproducible. The data is evidence for a local perturbation of the nanotube electronic system by removable trapped charges in the underneath substrate and excludes structural damage of the nanotube. The result has implications for using electron-beam lithography in nanotube device fabrication.
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