期刊
NANO LETTERS
卷 8, 期 10, 页码 3341-3344出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl8017725
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资金
- National Science Foundation [DMR-02-05328, HRD-0630456]
- Army Research Office [W911NF-06-1-0442]
We have derived an analytical effective-mass model and employed first-principles density functional theory to study the spatial confinement of carriers in core-shell and multishell structured semiconductor nanowires. The band offset effect is analyzed based on the subband charge density distributions, which is strongly dependent upon the strain relaxation. First-principles calculation results for spatially confined Si/Ge and GaN/GaP nanowires indicate accumulation of a Ge-core hole gas and a GaN-core electron gas, respectively, in agreement with experimental observations.
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