期刊
SENSORS
卷 15, 期 8, 页码 20232-20249出版社
MDPI AG
DOI: 10.3390/s150820232
关键词
MEMS microphone; field effect transistor; electret
资金
- National Research Foundation of Korea (NRF) - Korean Government (MSIP) [2011-0025673, 2011-0030075]
- UTRC (Unmanned Technology Research Center) at KAIST (Korea Advanced Institute of Science and Technology) - DAPA, ADD
- National Research Foundation of Korea [2011-0025673] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Capacitive-type transduction is now widely used in MEMS microphones. However, its sensitivity decreases with reducing size, due to decreasing air gap capacitance. In the present study, we proposed and developed the Electret Gate of Field Effect Transistor (ElGoFET) transduction based on an electret and FET (field-effect-transistor) as a novel mechanism of MEMS microphone transduction. The ElGoFET transduction has the advantage that the sensitivity is dependent on the ratio of capacitance components in the transduction structure. Hence, ElGoFET transduction has high sensitivity even with a smaller air gap capacitance, due to a miniaturization of the transducer. A FET with a floating-gate electrode embedded on a membrane was designed and fabricated and an electret was fabricated by ion implantation with Ga+ ions. During the assembly process between the FET and the electret, the operating point of the FET was characterized using the static response of the FET induced by the electric field due to the trapped positive charge at the electret. Additionally, we evaluated the microphone performance of the ElGoFET by measuring the acoustic response in air using a semi-anechoic room. The results confirmed that the proposed transduction mechanism has potential for microphone applications.
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