4.6 Article

SnO2 Highly Sensitive CO Gas Sensor Based on Quasi-Molecular-Imprinting Mechanism Design

期刊

SENSORS
卷 15, 期 2, 页码 3789-3800

出版社

MDPI AG
DOI: 10.3390/s150203789

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资金

  1. National Natural Science Foundation of China [51172085]
  2. 863 national project of China [2013AA031903]

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Response of highly sensitive SnO2 semiconductor carbon monoxide (CO) gas sensors based on target gas CO quasi-molecular-imprinting mechanism design is investigated with gas concentrations varied from 50 to 3000 ppm. SnO2 nanoparticles prepared via hydrothermal method and gas sensor film devices S-C (exposed to the target gas CO for 12 h after the suspension coating of SnO2 film to be fully dried, design of quasi-molecular-imprinting mechanism, the experiment group) and S-A (exposed to air after the suspension coating of SnO2 film to be fully dried, the comparison group) made from SnO2 nanoparticles are all characterized by XRD, SEM and BET surface area techniques, respectively. The gas response experimental results reveal that the sensor S-C demonstrates quicker response and higher sensitivity than the sensor S-A does. The results suggest that in addition to the transformation of gas sensor materials, surface area, and porous membrane devices, the Molecular Imprinting Theory is proved to be another way to promote the performance of gas sensors.

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