期刊
MRS BULLETIN
卷 37, 期 12, 页码 1138-1147出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs.2012.231
关键词
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资金
- National Science Foundation [DMR-0820382]
- Keck Foundation
- Air Force Office of Scientific Research
- Partner University Fund
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [820382] Funding Source: National Science Foundation
We present an introduction to the rapidly growing field of epitaxial graphene on silicon carbide, tracing its development from the original proof-of-concept experiments a decade ago to its present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now being recognized. Whether the ultimate promise of graphene-based electronics will ever be realized remains an open question. Silicon electronics is based on single-crystal substrates that allow reliable patterning on the nanoscale, which is an absolute requirement for any new electronic material. That is why epitaxial graphene is based on single-crystal silicon carbide. We also present recent results on nanopatterned graphene produced by etching the silicon carbide before annealing so that the graphene structures are produced in their final shapes. This avoids postannealing patterning, which is known to greatly affect transport properties on the nanoscale. Creating such structured graphene is an elegant method for avoiding pervasive patterning problems.
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