期刊
MRS BULLETIN
卷 35, 期 4, 页码 289-295出版社
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs2010.551
关键词
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资金
- U.S. ONR MURI
- NRI-MRSEC
- NSF-UMD-MRSEC [DMR 05-20471]
- NSF-DMR [08-04976]
- U.S. Department of Energy [DESL0001160]
- NSF [DMR/0748910]
- NSF/ECCS [0926056]
- ONR [N00014-09-1-0724]
- UC Lab [09-LR-06-117702-BASD]
- SWAN
- NSF-NRI
- Welch Foundation
- Direct For Mathematical & Physical Scien [0748910] Funding Source: National Science Foundation
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0804976] Funding Source: National Science Foundation
- Division Of Materials Research [0748910] Funding Source: National Science Foundation
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [0926056] Funding Source: National Science Foundation
Graphene, a single atom thick plane of carbon atoms arranged in a honeycomb lattice, has captivated the attention of physicists, materials scientists, and engineers alike over the five years following its experimental isolation. Graphene is a fundamentally new type of electronic material whose electrons are strictly confined to a two-dimensional plane and exhibit properties akin to those of ultrarelativistic particles. Graphene's two-dimensional form suggests compatibility with conventional wafer processing technology. Extraordinary physical properties, including exceedingly high charge carrier mobility, current-carrying capacity, mechanical strength, and thermal conductivity, make it an enticing candidate for new electronic technologies both within and beyond complementary metal oxide semiconductors (CMOS). Immediate graphene applications include high-speed analog electronics and highly conductive, flexible, transparent thin films for displays and optoelectronics. Currently, much graphene research is focused on generating and tuning a bandgap and on novel device structures that exploit graphene's extraordinary electrical, optical, and mechanical properties.
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