4.6 Article

Whither Oxide Electronics?

期刊

MRS BULLETIN
卷 33, 期 11, 页码 1006-1014

出版社

CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrs2008.220

关键词

-

资金

  1. U.S. Department of Energy

向作者/读者索取更多资源

In this issue we have endeavored to answer the question, Whither oxide electronics? This issue provides a framework and perspective on the progress in the field of oxide electronics over the past several decades, as well as the challenges and opportunities in the years to come. Building on the foundations laid by the pioneers in the materials community and spurred by the discovery of high-temperature superconductivity, there has been both tremendous progress in understanding the complex science of oxide electronic materials and the discovery of other fascinating new phenomena, including colossal magnetoresistance, multiferrocity, and two-dimensional electron gases in correlated oxide systems. Thin-film heterostructures provide a pathway to create novel devices and combinations of physical phenomena. Indeed, the ability to synthesize and control oxide heterostructures using sophisticated deposition techniques has become a key enabler of the recent advances in this field. These oxides are beginning to enter mainstream products because of their higher performance, for example, ferroelectric memories and oxides with high dielectric constant for computers that run at higher speed and use less power.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据