期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 30, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/30/2/024013
关键词
gallium oxide; transparent semiconductor oxides; MOVPE; surfactant effect
类别
资金
- Leibniz-Gemeinschaft [SAW-2012-IKZ2]
(Ga1-xInx)(2)O-3 epitaxial layers have been grown on (100) beta-Ga2O3 substrates by metal organic vapour phase epitaxy (MOVPE). The process parameters were tuned in order to obtain an In-poor (Ga1-xInx)(2)O-3 alloy, limiting the In incorporation below 3%. In this way it was possible to study the effect of In on the growth dynamics of Ga2O3. By varying the flow of the carrier gas (Ar) through the In precursor (trimethylindium) in a wide range, it was observed that for Ar/TMIn flows higher than a minimum threshold value, In was essential to obtain layers with very high crystal quality. The concentration of structural defects, such as stacking faults and twins, decreased dramatically and step-flow growth mode was achieved. These results have been explained by the tendency of In to float on the growing Ga2O3 surface, delivering an effective surfactant effect.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据