期刊
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
卷 30, 期 10, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0268-1242/30/10/105010
关键词
distributed feedback laser diode; buried heterostructure; current blocking structure
类别
资金
- 'Next Generation Optical and Electrical Module Technology for Smart Data Center' IT Convergence Device RD project [B0101-15-0132]
- Ministry of Public Safety & Security (MPSS), Republic of Korea [B0101-15-0132] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report a 1.5 mu m and 10 Gb s(-1) etched mesa buried heterostructure lambda/4-shifted distributed feedback laser diode (DFB-LD) for the low-cost application of WDM-based datacenter networks. To reduce the threshold current and improve the modulation bandwidth in a conventional p-/n-/p-InP current blocking structure, a thin undoped-InP (u-InP) layer was inserted between the side walls of the active region and the p-InP layer (i.e., a u-/p-/n-/p-InP structure), and the region containing the active region and the current blocking structures was etched in a mesa form (i.e., an etched mesa). From this work, it was found that a 300 mu m long anti-reflection (AR)-AR DFB-LD with a mesa width of 8 mu m is reduced by about 25% while a side mode suppression ratio is >50 dB and a 3 dB bandwidth is >10 GHz at a current of 40 mA; in addition, it shows a clear eye-opening with a dynamic extinction ratio of >4.5 dB at 10 Gb s(-1), and a power penalty of <1 dB after a 2 km transmission.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据