期刊
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
卷 16, 期 3, 页码 -出版社
TAYLOR & FRANCIS LTD
DOI: 10.1088/1468-6996/16/3/035009
关键词
molybdenum disulfide; field-effect transistor; p-toluene sulfonic acid; doping
资金
- National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2012M3A7B4049888]
- Priority Research Center Program through NRF - Ministry of Education [2010-0020207]
- Basic Science Research Program through NRF - Ministry of Education [2013R1A1A2061396]
- National Research Foundation of Korea [2012M3A7B4049888, 2010-0020207, 2013R1A1A2061396] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS2) by chemical doping. Electrical charge transport and Raman spectroscopy measurements revealed that the p-toluene sulfonic acid (PTSA) imposes n-doping in ML MoS2. The shift of threshold voltage for ML MoS2 transistor was analyzed as a function of reaction time. The threshold voltage shifted toward more negative gate voltages with increasing reaction time, which indicates an n-type doping effect. The shift of the Raman peak positions was also analyzed as a function of reaction time. PTSA treatment improved the field-effect mobility by a factor of similar to 4 without degrading the electrical characteristics of MoS2 devices.
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