期刊
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
卷 16, 期 3, 页码 -出版社
TAYLOR & FRANCIS LTD
DOI: 10.1088/1468-6996/16/3/036005
关键词
molecular beam epitaxy; ferroelectric; semiconductor
资金
- LABEX iMUST of Universite de Lyon [ANR-10-LABX-0064, ANR-11-IDEX-0007]
- ANR [ANR-10-EQPX-38-01]
- project INTENSE [ANR-14-CE26-0010]
- DOE
- [IBS-R009-D1]
- Agence Nationale de la Recherche (ANR) [ANR-14-CE26-0010] Funding Source: Agence Nationale de la Recherche (ANR)
- Ministry of Science, ICT & Future Planning, Republic of Korea [IBS-R009-D1-2015-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.
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