4.8 Article

Nanoscale temperature mapping in operating microelectronic devices

期刊

SCIENCE
卷 347, 期 6222, 页码 629-632

出版社

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/science.aaa2433

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资金

  1. National Science Foundation [DMR-1206849]
  2. Function Accelerated nanoMaterial Engineering (FAME), one of six centers of Semiconductor Technology Advanced Research network (STARnet), a Semiconductor Research Corporation
  3. Microelectronics Advanced Research Corporation
  4. Defense Advanced Research Projects Agency
  5. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
  6. Direct For Mathematical & Physical Scien [1206849] Funding Source: National Science Foundation
  7. Division Of Materials Research [1206849] Funding Source: National Science Foundation

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Modern microelectronic devices have nanoscale features that dissipate power nonuniformly, but fundamental physical limits frustrate efforts to detect the resulting temperature gradients. Contact thermometers disturb the temperature of a small system, while radiation thermometers struggle to beat the diffraction limit. Exploiting the same physics as Fahrenheit's glass-bulb thermometer, we mapped the thermal expansion of Joule-heated, 80-nanometer-thick aluminum wires by precisely measuring changes in density. With a scanning transmission electron microscope and electron energy loss spectroscopy, we quantified the local density via the energy of aluminum's bulk plasmon. Rescaling density to temperature yields maps with a statistical precision of 3 kelvin/hertz-1/2, an accuracy of 10%, and nanometer-scale resolution. Many common metals and semiconductors have sufficiently sharp plasmon resonances to serve as their own thermometers.

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