期刊
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
卷 21, 期 6, 页码 1173-1178出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00542-014-2188-6
关键词
-
This paper presents a low insertion loss capacitive shunt RF-MEMS switch. In the presented design, float metal concept is utilized to reduce the capacitance in up-state of the device. Float metal switch shows an insertion loss < 0.11 dB, a return loss below 26.27 dB up to 25 GHz as compared to 0.81 dB insertion, 8.67 dB return loss for the conventional switch without float metal. OFF state response is same for the both devices. Further pull-in voltage of 12.75 V and switching time of 69.62 A mu s have been observed in case of the conventional switch whereas device with float metal have 11.75 V and 56.41 A mu s. Improvement of around 2.5 times in bandwidth and 4 times in input power has been observed without self actuation, hold down problem. The designed switch can be useful at device and sub-system level for multi-band applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据