期刊
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS
卷 20, 期 7, 页码 1345-1349出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00542-013-1898-5
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资金
- SNST, NIT Calicut
Other than temperature and voltage, load plays a key role in anodic bonding process. In this paper we present a new design of top electrode (cathode) for anodic bonding machine by which the bonding time has been reduced up to 30 % in case of bare silicon wafer at -400 V and approximate 52 % in case of oxidized silicon wafer with Pyrex glass bonding at -800 V. Experimentally it has been observed there was no bonding in oxidized silicon wafer with Pyrex glass up to -600 V by using standard design while it has been successfully bonded at same voltage (-600 V) by using new design.
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