A new method for fast anodic bonding in microsystem technology

Other than temperature and voltage, load plays a key role in anodic bonding process. In this paper we present a new design of top electrode (cathode) for anodic bonding machine by which the bonding time has been reduced up to 30 % in case of bare silicon wafer at -400 V and approximate 52 % in case of oxidized silicon wafer with Pyrex glass bonding at -800 V. Experimentally it has been observed there was no bonding in oxidized silicon wafer with Pyrex glass up to -600 V by using standard design while it has been successfully bonded at same voltage (-600 V) by using new design.