4.3 Article Proceedings Paper

The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices

期刊

MICROELECTRONICS RELIABILITY
卷 88-90, 期 -, 页码 631-635

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2018.06.046

关键词

SiC; Power MOSFET; Reliability; HTGB; TID; Radiation; Synergetic effects

资金

  1. EU H2020 project I2MPECT [636170]
  2. National Natural Science Foundation of China (NSFC) [616340084]
  3. Youth Innovation Promotion Association CAS [2014101]
  4. Chinese Scholarship Council (CSC) [201506090154]
  5. H2020 Societal Challenges Programme [636170] Funding Source: H2020 Societal Challenges Programme

向作者/读者索取更多资源

The synergetic effects of High Temperature Gate Bias (HTGB) (0 h, 162 h, 332 h) and Total Ionization Dose (TID) radiation (0 kGy, 1 kGy, 3 kGy, 5 kGy, 10 kGy) response of 1200 V commercial SiC power MOSFETs were studied, along with annealing characteristics at room temperature. Electrical parameters were investigated with Current-Voltage (I-V) and Capacitance-Voltage (C-V) measurements. Results show that Gate Threshold Voltage (Vth) is sensitive to combination of HTGB and TID. Gate Leakage Current (I-gss) and Vth increase while Input Capacitance (C-iss) decrease after HTGB stress. Drain-Source Leakage Current (I-dss) and I-gss, rise up due to TID radiation while C-iss and Vth decrease. HTGB mitigates the shift of parameters due to radiation to some extent, especially I-dss. No obvious annealing effect was observed at room temperature for one week on all Device Under Tests (DUTs) in this work.

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