期刊
MICROELECTRONICS RELIABILITY
卷 88-90, 期 -, 页码 627-630出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2018.07.027
关键词
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In this paper, the light emission of SiC MOSFETs during reverse conduction, caused by the Light Emission Diode (LED)-like behaviour of the body diode, is studied and investigated. The photoemission from a 1.2 kV/20 A commercial device has been measured experimentally using a silicon photodiode. A behavioural characterization of the light output under different junction temperatures and current values has been performed. This allows the implementation of a fast, inexpensive and non-invasive temperature sensing strategy for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction.
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