Performance and reliability trade-offs for high-κ RRAM

Resistive random access memories (RRAM) have shown tremendous potential in replacing Flash technology for future non-volatile data storage device applications in just about a couple of years from now. Although RRAM has various advantages in terms of simple design, high density integration and CMOS compatible process flow, it has its own intrinsic constraints in terms of variability and reliability, just as is the case for any other technology. while performance and reliability are both key metrics for any new product or technology design initiative, the critical aspect to investigate is the trade-off involved in improving them, as the measures implemented to boost performance do not necessarily have a positive impact on its reliability (lifetime). Optimization of the RRAM design for commercial applications requires a clear understanding and acknowledgment of these performance - reliability trade-offs. This study presents a qualitative perspective to identifying and understanding these trade-offs and probing the various sources of variability in high-kappa RRAM. (C) 2014 Elsevier Ltd. All rights reserved.