期刊
MICROELECTRONICS RELIABILITY
卷 52, 期 4, 页码 613-627出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.microrel.2011.09.028
关键词
-
资金
- Research and Development for Next-Generation Information Technology of MEXT
- Japan Society for the Promotion of Science (JSPS)
Non-volatile RAM (NV-RAM) enables instant-on/off computing, which drastically reduces power consumption. One of the most promising candidates for NV-RAM technology is the spin-transfer torque RAM (SPRAM) based on magnetic tunnel junction (MTJ) device technology. This paper reviews the development of MTJ device technology and formulates considerations regarding its memory application, including SPRAM memory cell structure and operation, write voltage limitation, and thermal stability. At the circuit level, a disruptive read operation for future large integration scale is described. A 4F(2) memory cell and a multi-bit cell approach are also presented. Finally, the potential value of instant-on/off computing through NV-RAM and its impact are explored. (C) 2011 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据