期刊
MICROELECTRONICS JOURNAL
卷 45, 期 5, 页码 484-490出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2014.02.009
关键词
CMOS integrated circuits; CMOS differential temperature sensors; Electro-thermal characterization; Thermal coupling characterization; IR camera measurements; Laser interferometer measurements
资金
- Feder and Spanish MICINN [TEC2008-01856]
- AGAUR SGR 1497 [RyC2010-07434]
- Spanish Government [TEC2011-22607]
This paper reports on the design solutions and the different measurements we have done in order to characterize the thermal coupling and the performance of differential temperature sensors embedded in an integrated circuit implemented in a 65 nm CMOS technology. The on-chip temperature increases have been generated using diode-connected MOS transistors behaving as heat sources. Temperature measurements performed with the embedded sensor are corroborated with an infra-red camera and a laser interferometer used as thermometer. A 2 GHz linear power amplifier (PA) is as well embedded in the same silicon die. In this paper we show that temperature measurements performed with the embedded temperature sensor can be used to monitor the PA DC behavior and RF activity. (C) 2014 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据