4.4 Article

A DC behavioral electrical model for quasi-linear spin-valve devices including thermal effects for circuit simulation

期刊

MICROELECTRONICS JOURNAL
卷 42, 期 2, 页码 365-370

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2010.10.005

关键词

Verilog-A; Spin-valve; Giant magnetoresistance; Quasi-linear; Thermal model; Circuit simulation

资金

  1. Valencian Regional Government [GV05/150, GVACOMP2010-231]
  2. Andalusian Regional Government [P08-TIC-3580]
  3. Spanish Ministry of Education and Science [ENE2008-06588-C04-04, HP2003-0123]

向作者/读者索取更多资源

An advanced model for quasi-linear spin-valve (SV) structures is presented for circuit simulation purposes. The model takes into account electrical and thermal effects in a coupled way in order to allow a coherent representation of the sensor physics for design purposes of electronics applications based on these sensor devices. The model was implemented in Verilog-A and used in a commercial circuit simulator. For testing the model, different SV structures have been specifically fabricated and measured. The characterization included DC measurements as well as steady-state and transient thermal analysis. From the experimental data, the parameters of the model have been extracted. The model reproduces correctly the experimental measurements obtained for devices with diverse sizes in different electrical and thermal operation regimes. (C) 2010 Elsevier Ltd. All rights reserved.

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