4.4 Article Proceedings Paper

Room temperature nano- and microstructure photon detectors

期刊

MICROELECTRONICS JOURNAL
卷 40, 期 3, 页码 507-511

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2008.06.019

关键词

Infrared; Split-off band; PbS quantum dot; Tunneling quantum dot; Room temperature detector

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The development of room temperature infrared (IR) detectors for wavelengths beyond NIR will open up many applications that are currently limited due to cooling requirements. Three approaches are discussed, which show promise for room temperature IR detection. Tunneling quantum dot (QD) detector, utilizes a tunneling barrier in order to block the dark current while permitting the photocurrent to pass through due to resonance effects, has shown room temperature response for a detector operating at 6 and 17 mu m. The PbS QDs in a dielectric medium utilizes electronic polarizability of QDs, sensing only the variations of the radiation intensity, operating at ambient temperature. This method allows narrow multiple response bands. A GaAs/AlGaAs heterojunction detector, utilizing light, heavy and split-off hole transition in a p-doped semiconductor, shows a threshold of 3.4 mu m operating up to 330 K. (c) 2008 Elsevier Ltd. All rights reserved.

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