期刊
MICROELECTRONICS JOURNAL
卷 39, 期 3-4, 页码 475-477出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mejo.2007.07.027
关键词
high temperature method for material preparation; electron microscopy
In this paper we describe a method for growing vertically aligned bundles of Mo6S9-xIx (4.5<6) nanowires perpendicular with respect to the substrate. In this efficient method, a one-step synthesis directly from molybdenum, sulphur and iodine in the temperature gradient conditions is used. Bundles with similar lengths could be grown on quartz or conductive materials like molybdenum foil at the temperature of around 1040 K. X-ray diffraction (XRD), scanning electron spectroscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the obtained bundles of nanowires. Due to the similar lengths of the aligned bundles and their easiness to disperse in some polar solvents, this material could potentially be used also for applications like building blocks in nanodevices. (c) 2007 Elsevier Ltd. All rights reserved.
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