期刊
MICROELECTRONIC ENGINEERING
卷 120, 期 -, 页码 34-40出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2013.12.016
关键词
Ni(Pt) suicide; CMOS devices; Atom probe tomography
资金
- French National Agency (ANR) [ANR- 08-027-01]
Ni silicides used as contacts in source/drain and gate of advanced CMOS devices were analyzed by atom probe tomography (APT) at atomic scale. These measurements were performed on 45 nm nMOS after standard self-aligned silicide (salicide) process using Ni(5 at.% Pt) alloy. After the first annealing (RTA1), delta-Ni2Si was the only phase formed on gate and source/drain while, after the second annealing (RTA2), two different Ni suicides have been formed: NiSi on the gate and delta-Ni2Si on the source and drain. This difference between source/drain and gate regions in nMOS devices has been related to the Si substrate nature (poly or mono-crystalline) and to the size of the contact. In fact, NiSi seems to have difficulties to nucleate in the narrow source/drain contact on mono-crystalline Si. The results have been compared to analysis performed on 28 nm nMOS where the Pt concentration is higher (10 at.% Pt). In this case, theta-Ni2Si is the first phase to form after RTA1 and NiSi is then formed at the same time on source (or drain) and gate after RTA2. The absence of the formation of NiSi from delta-Ni2Si/Si(1 00) interface compared to theta-Ni2Si/Si(100) interface could be related to the difference of the interface energies. The redistributions of As and Pt in different silicides and interfaces were measured and discussed. In particular, it has been evidenced that Pt redistributions obtained on both 45 and 28 nm MOS transistors correspond to respective Pt distributions measured on blanket wafers. (C) 2013 Elsevier B.V. All rights reserved.
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