期刊
MICROELECTRONIC ENGINEERING
卷 109, 期 -, 页码 189-192出版社
ELSEVIER
DOI: 10.1016/j.mee.2013.03.121
关键词
Solution-derived thin film transistors; Al-IZO; Oxide TFT; Amorphous oxide TFT
资金
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2010-0024321]
- Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Korea government Ministry of Knowledge Economy [20114030200070]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20114030200070] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2010-0024321] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Aluminum-doped indium zinc oxide (IZO) thin film transistors (TFTs) were fabricated to examine the effect of aluminum incorporation in the solution-derived channel layer of TFTs. The IZO channel layer containing aluminum was amorphous. The addition of aluminum suppressed the carrier concentration of the channel layer and affected the electrical characteristics of the TFTs. The bottom-gate TFTs were manufactured on highly doped n-type silicon wafers coated with a SiO2 layer as a gate insulator. An aluminum-doped IZO solution was spin coated on the SiO2 layer and annealed in air. The molar ratio of aluminum-versus-indium-versus zinc was changed to determine the optimized molar ratio of a channel layer of TFTs depending on the annealing temperature and layer thickness. The optimized aluminum-doped indium zinc oxide TFTs exhibited a high on/off current ratio of similar to 3.0 x 10(6), a threshold voltage of similar to 2 V and a low subthreshold swing of 0.76 V/dec, respectively. (C) 2013 Elsevier B.V. All rights reserved.
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