期刊
MICROELECTRONIC ENGINEERING
卷 107, 期 -, 页码 54-57出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2013.02.077
关键词
Bistability; Fullerene; Polyisoprene; Nanocomposite; Memory; Negative differential resistance
Memory devices based on C-60 fullerene molecules and a polydiene, cis 1,4 polyisoprene (natural rubber) are described and their current bistability and switching characteristics during write-read-erase cycles are discussed. It is found that natural rubber nanocomposite with a fullerene content even as low as 0.1% exhibit bistability and switching behavior. Multiple tunneling and coulomb blockade effect along with dipolar carrier trapping are identified as the possible reasons for this current bistability. (C) 2013 Elsevier B.V. All rights reserved.
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