期刊
MICROELECTRONIC ENGINEERING
卷 105, 期 -, 页码 65-67出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2013.01.010
关键词
3C-SiC; Micromachining; LPCVD; Micro-structure; Membrane
资金
- French National Research Agency (ANR) [ANR-08-NANO-017]
Among the different silicon carbide polytypes, 3C-SiC is very interesting for Micro-Electro-Mechanical-Systems (MEMS) applications. This interest could benefit from the development of multi stacked Si/SiC heterostructures as illustrated by the achievement of a continuous silicon monocrystalline thin film on 3C-SiC epilayers deposited on (1 0 0) silicon substrates. Based on this recent result, an original monocrystalline 3C-SiC/Si/3C-SiC/Si hetero-structure has been developed by Low Pressure Chemical Vapor Deposition with a two-step process. This kind of structure allows the selective etching of the silicon epilayer in order to define an original 3C-SiC micro-structure. By wet etching, the remaining silicon film, used as a sacrificial layer, can be then etched, resulting in a monocrystalline 3C-SiC membrane on a 3C-SiC pseudosubstrate. This new and original approach opens the field for future MEMS devices. (C) 2013 Elsevier B.V. All rights reserved.
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