期刊
MICROELECTRONIC ENGINEERING
卷 112, 期 -, 页码 5-9出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2013.05.010
关键词
Chemical-mechanical polishing; Design of experiment; Optimization; Material removal rate
资金
- Science Fund for Creative Research Groups [51021064]
- National Natural Science Foundation of China [51205226]
- China Postdoctoral Science Foundation [2012M510420]
Chemical-mechanical polishing (CMP) is a critical process for the metallization of copper interconnections in ultra-large-scale integrated circuit manufacturing. This study aimed to maximize the material removal rate (MRR) and minimize the within wafer non-uniformity (WIWNU) simultaneously. The design of experiment approach was used to optimize the process parameters for the multi-zone CMP of a 12-inch wafer. Range analysis, ANOVA, and the overall balance method were conducted to identify the significant factors and optimum combination. The most common parameters during copper CMP were also investigated. Confirmation tests were performed as well, and the results indicated that an MRR of 6551 angstrom/min and a WIWNU of 4.72% can be obtained using the optimum combination. (C) 2013 Elsevier B.V. All rights reserved.
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