TCAD simulation of SOI TFETs and calibration of non-local band-to-band tunneling model

This paper reports a simulation based study of the non-local tunneling model using a commercially available technology computer-aided design (TCAD) device simulator. Single gate Tunnel FET devices with 400 nm gate length based on SOI technology are measured and compared with simulated data. A step by step algorithm to calibrate the nonlocal band-to-band tunneling model implemented in Synopsys Sentaurus TCAD has been shown, demonstrating the importance of model parameters. By using only the reduced mass as the fitting parameter we have obtained a physically meaningful fit with the measured data. The dependence of the tunneling generation rate on the different crystallographic directions is also demonstrated for the first time. (C) 2012 Elsevier B.V. All rights reserved.