Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

This work addresses a 1T1R RRAM architecture, which allows for the precise and reliable control of the forming/set current by using an access transistor. The 1T1R devices were fabricated in a modified 0.25 mu m CMOS technology. The memory cells show stable resistive switching in dc as well as pulse-induced mode with an endurance of 10(3) and 10(2) cycles, respectively. The variation of pulse widths as a function of amplitudes in 1R devices confirmed the set process distribution over a wide range of pulse widths (300 ns-100 mu A), whereas the reset process variation is confined (1-3 mu s). (c) 2011 Elsevier B.V. All rights reserved.