期刊
MICROELECTRONIC ENGINEERING
卷 88, 期 7, 页码 1113-1118出版社
ELSEVIER
DOI: 10.1016/j.mee.2011.03.035
关键词
ReRAM; Cross-point; Resistive switching
A survey of non-volatile and highly scalable cross-point memory in nanoscale resistive switching device is introduced. We present the basic operation of bipolar switching memory using combination between switching layer (HfOx/PCMO) and oxygen reservoir layer (ZrOx/AlOx) and discuss the crucial issue for cross-point ReRAM. Based on the results, the applications of cross-point structure without any selection device were introduced. To evaluate the feasibility of cross-point ReRAM, read-out margin was calculated using PSPICE simulation. In addition, by the device scaling, three phenomena can be confirmed: (1) reset current reduction, (2) local heating effect and (3) significant improvement of uniformity. (c) 2011 Elsevier B.V. All rights reserved.
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