期刊
MICROELECTRONIC ENGINEERING
卷 88, 期 11, 页码 3316-3326出版社
ELSEVIER
DOI: 10.1016/j.mee.2011.07.013
关键词
Power MOSFET; FLIMOSFET; Trench gate; Device simulation; Buried floating layers
资金
- University Grants Commission (UGC), Govt. of India
Novel trench gate floating islands MOSFET (TG-FLIMOSFET) designed using the concept of Opposite Doped Buried Regions (ODBR) and floating islands (FLI) along with trench gate technology is proposed and verified using two-dimensional simulations. The conventional FLIMOSFET experimentally demonstrated recently, although offers lowest on-resistance in the low voltage range, however, suffers from quasi-saturation effect like any other power MOSFETs. The proposed TG-FLIMOSFET demonstrated to obtain about 30% reduction in peak electric field in drift region of the proposed device. TG-FLIMOSFET also demonstrates quasi-saturation free forward and transconductance characteristics, improved synchronous rectifying characteristics, identical breakdown voltage, reduced on-resistance and increased transconductance 'gm' when compared with the conventional FLIMOSFET for various trench geometries. The proposed device breaks the limit set by the conventional FLIMOSFET approximately by a factor of 10. A possible process flow sequence to fabricate the proposed device commercially by integrating multi-epitaxial process with trench gate technology is also presented. (C) 2011 Elsevier B.V. All rights reserved.
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