期刊
MICROELECTRONIC ENGINEERING
卷 88, 期 6, 页码 935-938出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2010.12.025
关键词
Carbon; Uniformity; ReRAM; RRAM; Resistive memory
资金
- national research program of the 0.1 Terabit Non-volatile Memory Development Project
We investigated the resistive switching properties of a amorphous carbon-based ReRAM device. In order to minimize the fluctuations of switching parameters, we introduced an external load resistor (R-Load) in series, which indirectly acts as a current limiter. Reduced reset current (I-reset) and improved switching uniformity were obtained when the proper external R-Load was connected. The voltage drop at the ReRAM device during switching was directly monitored using an oscilloscope. We have confirmed that fluctuation of the effective voltage applied across the conducting filament was dramatically reduced by adding R-Load. In contrast, we observed degradation of retention characteristic of sample with R-Load. To meet both switching uniformity and retention characteristics, we need to optimize the resistance of low resistance state. (c) 2011 Elsevier B.V. All rights reserved.
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