Band offsets at the (100)GaSb/Al2O3 interface from internal electron photoemission study

From electron internal photoemission and photoconductivity measurements at the (1 0 0)GaSb/Al2O3 interface, the top of the GaSb valence band is found to be 3.05 +/- 0.10 eV below the bottom of the Al2O3 conduction band. This interface band alignment corresponds to conduction and valence band offsets of 2.3 +/- 0.10 eV and 3.05 +/- 0.15 eV, respectively, indicating that the valence band in GaSb lies energetically well above the valence band of InxGa1-xAs (0 <= x <= 0.53) or InP. (c) 2011 Elsevier B.V. All rights reserved.