4.4 Article

Ultradense silicon nanowire arrays produced via top-down planar technology

期刊

MICROELECTRONIC ENGINEERING
卷 88, 期 6, 页码 877-881

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ELSEVIER
DOI: 10.1016/j.mee.2010.11.034

关键词

Silicon nanowires; Top-down processing; Electrical characteristics

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A process is developed for the fabrication of vertically arranged poly-silicon nanowires via a rigorously top-down batch process. The technique allows the production of wire arrays with larger linear density (projected on the surface) than those achievable with any of the other proposed top-down processes. (c) 2010 Elsevier B.V. All rights reserved.

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