Ultrahigh (100%) barrier modification of n-InP Schottky diode by DNA biopolymer nanofilms

Here I demonstrate that DNA biopolymer molecules can control the electrical characteristics of conventional Al/n-InP metal-semiconductor contacts. Results show that DNA increases an effective barrier height as high as 0.87 eV by influencing the space charge region of n-InP device with a good rectifying behavior. (C) 2009 Elsevier B.V. All rights reserved.