期刊
MICROELECTRONIC ENGINEERING
卷 87, 期 2, 页码 98-103出版社
ELSEVIER
DOI: 10.1016/j.mee.2009.05.023
关键词
Titanium dioxide; Resistive switching; Resistive RAM; RRAM
资金
- Korea Science and Engineering Foundation (KOSEF)
- National Research Foundation of Korea [2005-0051153] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Effect of the top electrode (TE) metal on the resistive switching of(TE)/TiO2/Pt structure was investigated. It was confirmed that the potential barrier height between the metal and TiO2 is an important factor on the resistive switching characteristics. When high Schottky barrier was formed with the TiO2 film, using Pt or Au as a top electrode, both stable URS (unipolar) and BRS (bipolar resistive switching) characteristics were observed depending on the current compliance level. In the case of Ag, which forms a relatively low Schottky barrier, only BRS characteristics were observed, regardless of the current compliance level. In the case of Ni and Al, which have similar work function as Ag, unstable URS and BRS at very low current compliance levels were observed due to a chemical reaction at the interface. For the Ti electrode, resistive switching was not observed, because the work function of Ti is lower than that of TiO2 and TiO phase was formed at the interface (Ti/TiOx contact is ohmic). (C) 2009 Elsevier B.V. All rights reserved.
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