期刊
MICROELECTRONIC ENGINEERING
卷 87, 期 12, 页码 2482-2487出版社
ELSEVIER
DOI: 10.1016/j.mee.2010.05.004
关键词
Schottky diode; Interface states; Series resistance; Organic thin film
In this work, we prepared metal/interlayer/semiconductor (MIS) diodes by coating of an organic film on p-Si substrate. Metal(Al)/interlayer(Orange G=OG)/semiconductor(p-Si) MIS structure had a good rectifying behavior. By using the forward-bias I-V characteristics, the values of ideality factor (n) and barrier height (BH) for the Al/OG/p-Si MIS diode were obtained as 1.73 and 0.77 eV, respectively. It was seen that the BH value of 0.77 eV calculated for the Al/OG/p-Si MIS diode was significantly larger than the value of 0.50 eV of conventional Al/p-Si Schottky diodes. Modification of the potential barrier of Al/p-Si diode was achieved by using thin interlayer of the OG organic material. This was attributed to the fact that the OG organic interlayer increased the effective barrier height by influencing the space charge region of Si. The interface-state density of the MIS diode was found to vary from 2.79 x 10(13) to 5.80 x 10(12) eV(-1) cm(-2). (C) 2010 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据