期刊
MICROELECTRONIC ENGINEERING
卷 87, 期 12, 页码 2633-2637出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2010.07.040
关键词
Ceria; Abrasive; Chemical mechanical polishing (CMP); Removal selectivity
The effects of single crystalline ceria (CeO(2)) abrasives in chemical mechanical polishing (CMP) slurries were investigated for silicon dioxide (SiO(2)) and silicon nitride (Si(3)N(4)) CMP process. The size of ceria abrasives was controlled by varying hydrothermal reaction conditions. Polishing removal rate was measured with four slurries, with different mean primary particle size of 62, 116, 163 and 232 nm. The polishing results showed that the single crystalline ceria abrasives were not easily broken-down by mechanical force during CMP process. It was found that the removal rate of oxide and nitride film strongly depend upon abrasive size, whereas the surface uniformity deteriorates as abrasive size increases. The observed polishing results confirmed that there exists an optimum abrasive size (163 nm) for maximum removal selectivity between oxide and nitride films. The polishing behavior of the single crystalline ceria abrasives was discussed in terms of morphological properties of the abrasive particle. (C) 2010 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据