4.4 Article Proceedings Paper

Influence of crystallization temperature on InP ring-shaped quantum-dot molecules grown by droplet epitaxy

期刊

MICROELECTRONIC ENGINEERING
卷 87, 期 5-8, 页码 1416-1419

出版社

ELSEVIER
DOI: 10.1016/j.mee.2009.11.152

关键词

InP; GaAs; Quantum-dot molecules; Molecular-beam epitaxy; Droplet epitaxy

向作者/读者索取更多资源

We have studied the influence of crystallization temperature on the structural and optical properties of InP ring-shaped quantum-dot molecules (QDMs) grown by solid-source molecular-beam epitaxy (MBE) using droplet epitaxy technique. The surface morphologies and photoluminescence spectra were examined by ex situ atomic force microscopy (AFM) and micro-photoluminescence (micro-PL) measurement. The increasing of crystallization temperature results in the decreasing of InP quantum-dot (QD) and ring-shaped QDM densities while average outer and inner diameters of InP ring-shaped QDMs become larger. The distributions of the number of InP QDs per InP ring-shaped QDMs, lateral size of InP QDs, height of InP QDs and height and lateral size relative distributions of InP QDs have been statistically investigated. The photoluminescence peaks of InP ring-shaped QDMs are red-shifted when crystallization temperature increases. (C) 2009 Elsevier B.V. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据