期刊
MICROELECTRONIC ENGINEERING
卷 87, 期 3, 页码 387-390出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2009.06.034
关键词
NiCoP; NiP; Copper; Diffusion barrier; Electroless
Electroless deposited NiP and NiCoP thin films were studied for their diffusion barrier properties for copper wiring in ultra-large scale integration (ULSI) technology. The thermal stability of the Si/NiP/Cu and Si/NiCoP/Cu structures was evaluated by X-ray diffractometer (XRD), four probe method and field emission-scanning electron microscope (FE-SEM). Results indicated that both structures, i.e. Si/NiP/Cu and Si/NiCoP/Cu are thermally stable up to 500 degrees C. Further annealing results in formation of various silicided phases. (C) 2009 Elsevier B.V. All rights reserved.
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