Interface states model for III-V oxide interfaces

A general model of the density of inter-face states at III-V oxide interfaces is presented. The interface states arise from the native defects, such as Ga or As dangling bonds and Ga-Ga or As-As like-atom bonds created by oxidation. As-As bonds are a likely cause of states at the conduction band edge of GaAs. The model explains the difficulty of n-type operation for GaAs FETs compared to GaAs pFETs or to InGaAs n FETs. (C) 2009 Elsevier B.V. All rights reserved.