期刊
MICROELECTRONIC ENGINEERING
卷 86, 期 7-9, 页码 1589-1591出版社
ELSEVIER
DOI: 10.1016/j.mee.2009.03.087
关键词
Germanium; GeO2; Interface
An atomistic model of the Ge-GeO2 interface has been generated through first-principle methods based on density functional theory. The interface model consists of amorphous GeO2 connected to crystalline Ge through a substoichiometric oxide region showing regular structural parameters. Structural and electronic properties are compared to available experimental data and studied as they evolve across the Ge-GeO2 interface. (C) 2009 Elsevier B.V. All rights reserved.
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