Single-electron tunnelling via quantum dot cavities built on a silicon suspension nanobridge

This paper presents fabrication and characterization of novel nanoscale Si transistors with a suspended quantum dot cavity formed on a nanobridge channel. A 300-nm-long and 50-nm-wide nanobridge channel and quantum dot cavities were successfully fabricated on silicon-on-insulator (SOI) substrates and nanocrystalline silicon films by using the electron beam lithography combined with isotropic and anisotropic etching. We observed clear Coulomb oscillation for the fabricated nanobridge transistors at higher temperatures compared with transistors with a non-suspended channel. (c) 2008 Elsevier B.V. All rights reserved.